Cambridge Studies in Semiconductor Physics and Microelectronic Engineering: Doping in III-V Semiconductors
Ocena książki
Parametry
- 632 strony
- 23 godziny czytania
Więcej o książce
Doping of III-V semiconductor compounds is the basis of virtually all semiconductor heterostructures and all optoelectronic devices. This is the first book to provide a comprehensive and thorough treatment of the subject, examining both theoretical and experimental aspects, and including important material on delta-doping. The author is involved in research at one of the world's foremost microelectronics laboratories, and while assessing the current state of the art, he also provides valuable introductory material for those beginning studies or research in this field.
Zakup książki
Cambridge Studies in Semiconductor Physics and Microelectronic Engineering: Doping in III-V Semiconductors, Haroon Ahmad, E. Fred Schubert, Michael P. Peppers
- Język
- Rok wydania
- 2005
- Oprawa
- (miękka)
Metody płatności
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- Tytuł
- Cambridge Studies in Semiconductor Physics and Microelectronic Engineering: Doping in III-V Semiconductors
- Język
- angielski
- Wydawca
- Cambridge University Press
- Rok wydania
- 2005
- Oprawa
- miękka
- Liczba stron
- 632
- ISBN10
- 052101784X
- ISBN13
- 9780521017848
- Seria
- Kategorie
- Ocena
- 4 z 5
- Opis
- Doping of III-V semiconductor compounds is the basis of virtually all semiconductor heterostructures and all optoelectronic devices. This is the first book to provide a comprehensive and thorough treatment of the subject, examining both theoretical and experimental aspects, and including important material on delta-doping. The author is involved in research at one of the world's foremost microelectronics laboratories, and while assessing the current state of the art, he also provides valuable introductory material for those beginning studies or research in this field.