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- 266 stron
- 10 godzin czytania
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Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Zakup książki
Computational Microelectronics: Strain-Induced Effects in Advanced MOSFETs, Viktor Sverdlov, S. Selberherr
- Język
- Rok wydania
- 2010
- Oprawa
- (twarda),
- Stan książki
- Uszkodzony
- Cena
- 15,15 zł
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- Tytuł
- Computational Microelectronics: Strain-Induced Effects in Advanced MOSFETs
- Język
- angielski
- Autorzy
- Viktor Sverdlov, S. Selberherr
- Wydawca
- Springer
- Rok wydania
- 2010
- Oprawa
- twarda
- Liczba stron
- 266
- ISBN10
- 3709103819
- ISBN13
- 9783709103814
- Seria
- Kategorie
- Opis
- Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.